4H SiC HPSI Wafer

1. Expired 7 years, 12 weeks and 5 days ago

Specification for 4H-SiC (Quote Number 19303)
The SiC wafers shall have the following specifications:
1. Three 4H-SiC, high-purity semi-insulating, research grade, 3" dia., 8° off-axis, > 1E5 ohm-cm, both sides polished/silicon face with CMP finish. One n-type, > 1 x 1019 cm-3 epilayer of 3.0 μm thick.
2. Three 4H-SiC, high-purity semi-insulating, research grade, 3" dia., 8° off-axis, > 1E5 ohm-cm, both sides polished/silicon face with CMP finish. One n-type, > 1 x 1019 cm-3 epilayer of 5.0 μm thick.
3. Three 4H-SiC, high-purity semi-insulating, research grade, 3" dia., 8° off-axis, > 1E5 ohm-cm, both sides polished/silicon face with CMP finish. One p-type, > 1 x 1020 cm-3 epilayer of 5.0 μm thick.
4. SIMS analysis of epilayers.
5. Delivery to be no later than 8 weeks from date of receipt of PO.

Jonah L. Berry, Phone 2288136120, Email jonah.l.berry@nasa.gov

• Research & Development